Improvement in ferroelectric properties of Pb(Zr0.35Ti 0.65)O3 thin films using a Pb2Ru 2O7-x conductive interfacial layer for ferroelectric random access memory application

Applied Physics Letters

Volumn 83, Issue 14, 2003, Pages 2880-2882

  Ryoo, Sung Nam ^a   Yoon, Soon Gil ^a   Kim, Seung Hyun ^b  

^a Chungnam National University   (South Korea)

^b INOSTEK Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; DEPOSITION; FERROELECTRICITY; INTERFACES (MATERIALS); LATTICE CONSTANTS; LEAD COMPOUNDS; POLARIZATION;

REMANENT POLARIZATION;

THIN FILMS;

EID: 0142198454     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1616194     Document Type: Article

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