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Volumn 81, Issue 10, 2002, Pages 1863-1865
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Sub-100 nm SrBi2Ta2O9 film with ultrathin BiTaO4 capping layer for 3 v or lower-voltage ferroelectric memory operation
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Author keywords
[No Author keywords available]
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Indexed keywords
CAPPING LAYER;
DIELECTRIC BREAKDOWN STRENGTH;
FERROELECTRIC MEMORY;
FERROELECTRIC PROPERTY;
FURNACE ANNEALING;
PROCESS TEMPERATURE;
SBT FILMS;
SUB-100 NM;
ULTRA-THIN;
ELECTRIC BREAKDOWN;
FERROELECTRIC DEVICES;
RAPID THERMAL ANNEALING;
SURFACE ROUGHNESS;
FERROELECTRICITY;
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EID: 79956005528
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1496499 Document Type: Article |
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Times cited : (8)
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References (7)
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