Characteristics and surface energy of silicon-doped diamond-like carbon films fabricated by plasma immersion ion implantation and deposition

Diamond and Related Materials

Volumn 15, Issue 9, 2006, Pages 1276-1281

  Wan, G J ^a,b   Yang, P ^b   Fu, Ricky K Y ^a   Mei, Y F ^a   Qiu, T ^a,c   Kwok, S C H ^a   Ho, Joan P Y ^a   Huang, N ^b   Wu, X L ^a,c   Chu, Paul K ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b SOUTHWEST JIAOTONG UNIVERSITY   (China)

^c NANJING UNIVERSITY   (China)

Author keywords

Contact angle; Plasma immersion ion implantation and deposition; Si doped DLC; Surface energy

Indexed keywords

CONTACT ANGLE; DOPING (ADDITIVES); INTERFACIAL ENERGY; ION IMPLANTATION; RAMAN SPECTROSCOPY; SILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

BONDING STATES; CATHODIC ARC PLASMAS; PLASMA IMMERSION ION IMPLANTATION AND DEPOSITION; SI-DOPED DLC;

DIAMOND LIKE CARBON FILMS;

EID: 33746643780     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2005.09.042     Document Type: Article

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