Structure and properties of Si incorporated tetrahedral amorphous carbon films prepared by hybrid filtered vacuum arc process

Diamond and Related Materials

Volumn 11, Issue 2, 2002, Pages 198-203

  Seung Lee, Churl ^a   Lee, Kwang Ryeol ^a   Yong Eun, Kwang ^a   Hyun Yoon, Ki ^b   Hee Han, Jun ^c  

^a Korea Institute of Science and Technology   (South Korea)

^b Yonsei University   (South Korea)

^c Korea Research Institute of Standards and Science   (South Korea)

Author keywords

Filtered vacuum arc; Reduction of residual stress; Si incorporation; Tetrahedral amorphous carbon

Indexed keywords

CARBON; CHEMICAL BONDS; COMPOSITION EFFECTS; COMPRESSIVE STRESS; RELAXATION PROCESSES; RESIDUAL STRESSES; SILICON; SPUTTER DEPOSITION; STRAIN; SUBSTITUTION REACTIONS;

VACUUM ARC PROCESSES;

AMORPHOUS FILMS;

ARGON; CARBON; SILICON; SILICON CARBIDE;

CARBON; CHEMICAL STRUCTURE; INORGANIC COATING; MECHANICAL PROPERTY; SILICON;

ATOMIC BOND; CHEMICAL STRUCTURE; CONCENTRATION (PARAMETERS); FILM; FLOW RATE; GAS FLOW; MECHANICAL PROPERTY; MECHANICAL STRESS; SPUTTERING (PHYSICS);

EID: 0036473461     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(01)00666-5     Document Type: Article

References (23)