Defect densities in tetrahedrally bonded amorphous carbon deduced by junction capacitance techniques

Applied Physics Letters

Volumn 74, Issue 3, 1999, Pages 371-373

  Palinginis, Kimon C ^a   Lubianiker, Yoram ^a   Cohen, J David ^a   Ilie, Adelina ^b   Kleinsorge, Britta ^b   Milne, William I ^b  

^a UNIVERSITY OF OREGON   (United States)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001395496     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123074     Document Type: Article

References (14)

1. P. J. Fallon, V. S. Veerasamy, C. A. Davis, J. Robertson, G. A. J. Amaratunga, W. I. Milne, and J. Koskinen, Phys. Rev. B 48, 4777 (1993).
2. M. Chhowalla, J. Robertson, C. W. Chen, S. R. P. Silva, C. A. Davis, G. A. J. Amaratunga, and W. I. Milne, J. Appl. Phys. 81, 139 (1997).
3. R. Lossy, D. L. Pappas, R. A. Roy, J. J. Cuomo, and V. M. Sura, Appl. Phys. Lett. 61, 171 (1992).
4. V. S. Veerasamy, G. A. J. Amaratunga, C. A. Davis, W. I. Milne, P. Hewitt, and M. Weiler, Solid-State Electron. 37, 319 (1994).
5. P. Stumm, D. A. Drabold, and P. A. Fedders, J. Appl. Phys. 81, 1289 (1997).
6. J. M. Essick and J. D. Cohen, Appl. Phys. Lett. 55, 1232 (1989).
7. H. Matsuura, J. Appl. Phys. 64, 1964 (1988).
8. C. A. Davis, G. A. J. Amaratunga, and K. M. Knowles, Phys. Rev. Lett. 80, 3280 (1998).
9. D. V. Lang, J. D. Cohen, and J. P. Harbison, Phys. Rev. B 25, 5285 (1982).
10. C. E. Michelson, A. V. Gelatos, and J. D. Cohen, Appl. Phys. Lett. 47, 412 (1985).
11. S. M. Sze, Physics of Semiconductor Devices, 1st ed. (Wiley, New York, 1969), pp. 84-96.
12. G. Fusco, A. Tagliaferro, W. I. Milne, and J. Robertson, Diamond Relat. Mater. 6, 783 (1997).
13. J. Ristein, J. Schafer, and L. Ley, Diamond Relat. Mater. 4, 508 (1995).
14. J. Robertson and C. A. Davis, Diamond Relat. Mater. 4, 441 (1995).