The origin of current gain under illumination in amorphous silicon n-i-p-i-n structures

Journal of Applied Physics

Volumn 87, Issue 4, 2000, Pages 1874-1881

  Chatterjee, P ^a   Vanderhaghen, R ^b   Equer, B ^b  

^a DEPARTMENT OF MATERIALS SCIENCE   (India)

^b LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0041729054     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.372107     Document Type: Article

References (12)

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