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Volumn 7, Issue 11-12, 1998, Pages 1734-1738

Schottky barrier formation on r.f.-plasma enhanced chemical vapour deposited hydrogenated amorphous carbon

Author keywords

Amorphous carbon; MSM; PECVD; Schottky diode

Indexed keywords

AMORPHOUS FILMS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; FILM PREPARATION; HYDROGENATION; INTERFACES (MATERIALS); PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCHOTTKY BARRIER DIODES;

EID: 0032304635     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0925-9635(98)00313-6     Document Type: Article
Times cited : (17)

References (18)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.