Chemical bonding and interdiffusion in scaled down SiO2/Si 3N4/SiO2 stacks with top oxide formed by thermal ed copyoxidation

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 4, 2006, Pages 1716-1723

  Saraf, Meirav ^a   Edrei, Rachel ^a   Akhvlediani, Roza ^a   Roizin, Yakov ^b   Shima Edelstein, Ruth ^b   Hoffman, Alon ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b TOWER SEMICONDUCTOR LTD   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; DIFFUSION; FILMS; NITRIDES; PHOTOELECTRON SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; THERMOOXIDATION;

DRY OXIDATION; PYROGENIC PROCESS; TIME-OF-FLIGHT SECONDARY ION MASS SPECTROMETRY; WET OXIDATION;

SILICA;

EID: 33746494077     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2209990     Document Type: Article

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