Electrical properties of ultrathin RTCVD oxinitride films in n and p-channel MOSFET's

Microelectronic Engineering

Volumn 36, Issue 1-4, 1997, Pages 153-155

  Maneglia, Y ^a   Bauza, D ^a   Morfouli, Y ^a   Ghibaudo, G ^a  

^a Grenoble INP Phelma   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; DIELECTRIC FILMS; ELECTRIC INSULATING MATERIALS; ELECTRONIC DENSITY OF STATES; GATES (TRANSISTOR); INTERFACES (MATERIALS); NITRIDING; ULTRATHIN FILMS; CARRIER CONCENTRATION; ELECTRIC CHARGE; NITRIDES; NITROGEN; SEMICONDUCTING FILMS; SIGNAL NOISE MEASUREMENT;

OXINITRIDES; RAPID THERMAL CHEMICAL VAPOR DEPOSITION (RTCVD); TRAP DENSITY; CHARGE PUMPING MEASUREMENT; INTERFACE TRAP DENSITY; THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 0031150233     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(97)00038-5     Document Type: Article

References (12)

1. W.F. Hill et al. IEEE Trans. Electron Devices ED-43, 15 (1996).
2. P. Morfouli et al. IEEE Electron Device Letters, 17, 395 (1996).
3. Y. Maneglia and D. Bauza, J. Appl. Phys. 79, 187 (1996).
4. Y. Maneglia, D. Bauza and G. Ghibaudo, ESSDERC'96 Conference, Bologna, Italy 9-11 September 1996.
5. D. Bauza and Y. Maneglia, IEEE Trans. Electron. Devices, submitted.
6. R.A. Wachnik and J.R. Lowney, Solid-St. Electron. 29, 447 (1986).
7. D. Bauza and G. Ghibaudo, Solid-St. Electron. 39, 563 (1996).
8. F.P. Heimann and G. Warfield, IEEE Trans. Electron Devices ED-12, 167 (1965).
9. G. Groeseneken et al. IEEE Trans. Electron Devices ED-31, 42 (1984).
10. Y. Maneglia and D. Bauza, ECS'97 Meeting, submitted.
11. G. Ghibaudo, et al. Phys. Stat. Solidi A 124, 571 (1991).
12. K.K. Hung et al, IEEE Trans. Electron Devices ED-37, 654 (1990).