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Volumn 245, Issue 1-3, 1999, Pages 224-231

Properties of stacked dielectric films composed of SiO2/Si3N4/SiO2

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; DIELECTRIC PROPERTIES OF SOLIDS; ELECTRIC CURRENT MEASUREMENT; FILM GROWTH; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON NITRIDE; SILICON WAFERS; THERMOOXIDATION;

EID: 0032674814     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00886-2     Document Type: Article
Times cited : (7)

References (18)
  • 11
    • 0344870376 scopus 로고
    • Addison-Wesley, New York
    • E. Hecht, Zajac, Optics, Addison-Wesley, New York, 1973.
    • (1973) Zajac, Optics
    • Hecht, E.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.