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Volumn 245, Issue 1-3, 1999, Pages 224-231
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Properties of stacked dielectric films composed of SiO2/Si3N4/SiO2
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Author keywords
[No Author keywords available]
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Indexed keywords
CHEMICAL VAPOR DEPOSITION;
COMPOSITION EFFECTS;
DIELECTRIC PROPERTIES OF SOLIDS;
ELECTRIC CURRENT MEASUREMENT;
FILM GROWTH;
POLYCRYSTALLINE MATERIALS;
SEMICONDUCTING FILMS;
SEMICONDUCTING SILICON COMPOUNDS;
SILICA;
SILICON NITRIDE;
SILICON WAFERS;
THERMOOXIDATION;
LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD);
DIELECTRIC FILMS;
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EID: 0032674814
PISSN: 00223093
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-3093(98)00886-2 Document Type: Article |
Times cited : (7)
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References (18)
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