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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 1949-1952

Membrane structures containing InGaN/GaN quantum wells fabricated by wet etching of sacrificial silicon substrates

(8) Park, S H a Liu, C b Gu, E b Dawson, M D b Watson, I M b Bejtka, K b Edwards, P R b Martin, R W b

a Chosun University (South Korea)

b UNIVERSITY OF STRATHCLYDE (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

MULTIPLE QUANTUM WELLS (MQWS); ORGANIC VAPOUR PHASE EPITAXY; SILICON SUBSTRATES; WET ETCHING; 68.60.BS; 78.66.FD; 78.67.DE; 81.07.ST; 81.15.GH;

CATHODOLUMINESCENCE; ETCHING; GALLIUM NITRIDE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES; VAPOR PHASE EPITAXY; ATOMIC FORCE MICROSCOPY; MEMBRANE STRUCTURES; OPTICAL PUMPING; ORGANOMETALLICS; PLASMA ETCHING; SAPPHIRE; SILICON; SURFACE ROUGHNESS; WET ETCHING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33746350760 PISSN: 18626351 EISSN: None Source Type: Journal
DOI: 10.1002/pssc.200565188 Document Type: Conference Paper

Times cited : (3)

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