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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 45, Issue 24-28, 2006, Pages

Optical properties of GaN/AlN(0001) quantum dots grown by plasma-assisted molecular beam epitaxy

(4) Brown, Jay S a Petroff, Pierre M a Feng, W U a,b Speck, James S a,b

a University of California (United States)

b UNIVERSITY OF CALIFORNIA (United States)

Author keywords

Aln; Ga adsorbate mediated gan growth; Gan; Quantum dots

Indexed keywords

ATOMIC FORCE MICROSCOPY; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS;

GA-ADSORBATE MEDIATED GAN GROWTH; HIGH-ENERGY ELECTRON DIFFRACTION; WETTING LAYER;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33746297380 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.45.L669 Document Type: Article

Times cited : (10)

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