Formation of high-density GaN self-assembled quantum dots by MOCVD

Journal of Crystal Growth

Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 161-166

  Hoshino, K ^a,b   Arakawa, Y ^a,b  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

A1. Quantum dots; A1. Stranski krastanow; A3. Metalorganic chemical vapor deposition; B1. Gan

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; DENSITY (SPECIFIC GRAVITY); DENSITY CONTROL (SPECIFIC GRAVITY); GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SELF ASSEMBLY; WETTING; X RAY DIFFRACTION;

QUANTUM COMPUTATION; STRANSKI-KRASTANOW GROWTH MODE; THRESHOLD CURRENT; WETTING LAYER (WL);

SEMICONDUCTOR QUANTUM DOTS;

EID: 9944250819     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.08.130     Document Type: Conference Paper

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