Molecular beam epitaxial growth of Cd1-yZnySe xTe1-x on Si(211)

Journal of Electronic Materials

Volumn 33, Issue 6, 2004, Pages 498-502

  Chen, Y P ^a   Brill, G ^a   Campo, E M ^b   Hierl, T ^b   Hwang, J C M ^b   Dhar, N K ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b LEHIGH UNIVERSITY   (United States)

Author keywords

(211); CdSeTe; CdTe; CdZnSeTe; CdZnTe; Etched pit density (EPD); HgCdTe; Long wavelength infrared (LWIR); Molecular beam epitaxy (MBE); Se; Si

Indexed keywords

CHEMICAL CLEANING; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; INFRARED RADIATION; MOLECULAR BEAM EPITAXY; NUCLEATION; SILICON; SUBSTRATES; SURFACE CHEMISTRY; X RAY DIFFRACTION;

COMPOSITE SUBSTRATES; LONG-WAVELENGTH INFRARED (LWIR); MOLECULAR BEAM EPITAXIAL GROWTH; QUATERNARY ALLOY;

CADMIUM COMPOUNDS;

EID: 3042837793     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-004-0037-6     Document Type: Conference Paper

References (10)

1. T.J. de Lyon, S.M. Johnson, C.A. Cockrum, O.K. Wu, W.J. Hamilton, and G.S. Kamath, J. Electrochem. Soc. 141, 2888 (1994).
2. N.K. Dhar, P.R. Boyd, M. Martinka, J.H. Dinan, L.A. Almeida, and N. Goldsman, J. Electron. Mater. 29, 748 (2000).
3. Y.P. Chen, S. Sivananthan, and J.P. Faurie, J. Electron. Mater. 22, 1306 (1993).
4. L.A. Almeida, L. Hirsch, M. Martinka, P.R. Boyd, and J.H. Dinan, J. Electron. Mater. 30, 608 (2001).
5. Y. Chen, G. Brill, and N. Dhar, J. Cryst. Growth 252, 270 (2003).
6. Y. Chen, G. Brill, and N. Dhar, J. Electron. Mater. 32, 723 (2003).
7. S.M. Sze, Physics of Semiconductor Device (New York: Wiley Interscience Publication, 1981), pp. 848-849.
8. J.I. Goldstein, Scanning Electron Microscopy and X-ray Microanalysis, 2nd ed. (New York: Plenum Press, 1992).
9. " Probe for Windows, User Manual", by Advanced Microbeam, Vienna, OH (1992).
10. W.J. Everson, C.K. Srd, J.L. Sepich, B.E. Dean, G.T. Neugebauer, and H.F. Schaake, J. Electron. Mater. 24, 505 (1995).