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Volumn 33, Issue 6, 2004, Pages 662-666
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Physical structure of molecular-beam epitaxy growth defects in HgCdTe and their impact on two-color detector performance
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Author keywords
Growth defects; HgCdTe; Molecular beam epitaxy (MBE); Two color detector
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Indexed keywords
DRY ETCHING;
ENERGY DISPERSIVE SPECTROSCOPY;
LIQUID PHASE EPITAXY;
MERCURY COMPOUNDS;
MOLECULAR BEAM EPITAXY;
POLYCRYSTALLINE MATERIALS;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTOR DIODES;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY ANALYSIS;
FOCAL PLANE ARRAYS (FPA);
MID-WAVELENGTH INFRARED (MWIR);
VOID NUCLEATION;
WET CHEMICAL ETCHING;
CRYSTAL DEFECTS;
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EID: 3142587175
PISSN: 03615235
EISSN: None
Source Type: Journal
DOI: 10.1007/s11664-004-0064-3 Document Type: Conference Paper |
Times cited : (19)
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References (13)
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