In-situ spectroscopic study of the As and Te on the Si (112) surface for high-quality epitaxial layers

Journal of Electronic Materials

Volumn 35, Issue 6, 2006, Pages 1455-1460

  Jaime Vasquez, M ^a   Martinka, M ^a   Jacobs, R N ^a   Groenert, M ^a  

^a U S ARMY   (United States)

Author keywords

Adsorption; Ion scattering spectroscopy (ISS); Molecular beam epitaxy (MBE) substrate; Te As Si (112); X ray photoelectron spectroscopy (XPS)

Indexed keywords

ION SCATTERING SPECTROSCOPY (ISS); MOLECULAR BEAM EPITAXY (MBE) SUBSTRATE; SURFACE COVERAGE MEASUREMENT; TE/AS/SI (112);

ADSORPTION; ARSENIC; ATOMS; SCATTERING; SILICON; SPECTROSCOPIC ANALYSIS; TELLURIUM; X RAY PHOTOELECTRON SPECTROSCOPY;

MOLECULAR BEAM EPITAXY;

EID: 33746191899     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0283-x     Document Type: Conference Paper

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