Control of injected carriers in tetracyano-p-quinodimethane encapsulated carbon nanotube transistors

Applied Physics Letters

Volumn 87, Issue 9, 2005, Pages

  Shiraishi, Masashi ^a,b   Nakamura, Shuichi ^a   Fukao, Tomohiro ^a   Takenobu, Taishi ^b,c   Kataura, Hiromichi ^d   Iwasa, Yoshihiro ^b,c  

^a OSAKA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

^d NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND SHIFTS; DEVICE OPERATIONS; ELECTRON INJECTION; SOURCE-DRAIN VOLTAGE;

BAND STRUCTURE; CARBON NANOTUBES; ELECTRIC POTENTIAL; ELECTRODES; SEMICONDUCTOR DOPING; SYSTEM STABILITY;

TRANSISTORS;

EID: 24644436539     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2035331     Document Type: Article

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