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Acta Physica Polonica A

Volumn 98, Issue 3, 2000, Pages 183-193

Application of GaN pressure grown crystals for epitaxy of GaN-based structures

(1) Grzegory, I a

a INSTITUTE OF HIGH PRESSURE PHYSICS (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005711228 PISSN: 05874246 EISSN: None Source Type: Journal
DOI: 10.12693/APhysPolA.98.183 Document Type: Article

Times cited : (7)

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