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Volumn 180, Issue 1, 2000, Pages 327-332

Comparison of the mechanism of optical amplification in InGaN/GaN heterostructures grown by molecular beam epitaxy and MOCVD

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFICATION; LUMINESCENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; OPTICAL VARIABLES MEASUREMENT; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SPECTROSCOPY; STATISTICAL METHODS;

EID: 18244422006     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200007)180:1<327::AID-PSSA327>3.0.CO;2-R     Document Type: Article
Times cited : (10)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.