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Volumn 180, Issue 1, 2000, Pages 327-332
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Comparison of the mechanism of optical amplification in InGaN/GaN heterostructures grown by molecular beam epitaxy and MOCVD
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AIXTRON AG
(Germany)
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Author keywords
[No Author keywords available]
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Indexed keywords
AMPLIFICATION;
LUMINESCENCE;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
MOLECULAR BEAM EPITAXY;
OPTICAL VARIABLES MEASUREMENT;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR DEVICE MODELS;
SPECTROSCOPY;
STATISTICAL METHODS;
INDIUM GALLIUM NITRIDE;
POTENTIAL FLUCTUATIONS;
THERMIONIC THERMALIZATION;
HETEROJUNCTIONS;
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EID: 18244422006
PISSN: 00318965
EISSN: None
Source Type: Journal
DOI: 10.1002/1521-396X(200007)180:1<327::AID-PSSA327>3.0.CO;2-R Document Type: Article |
Times cited : (10)
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References (14)
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