Role of anode hole injection and valence band hole tunneling on interface trap generation during hot carrier injection stress

IEEE Electron Device Letters

Volumn 27, Issue 7, 2006, Pages 585-587

  Saha, D ^a   Varghese, D ^a   Mahapatra, S ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

Anode hole injection (AHI); Charge pumping (CP); Hot carrier injection (HCI); Interface traps (NIT); Reaction diffusion (R D) model; Valence band hole tunneling (VBHT)

Indexed keywords

ANODES; DENSITY (SPECIFIC GRAVITY); ELECTRON TRAPS; GATES (TRANSISTOR); HOT CARRIERS; INTERFACES (MATERIALS); SILICA; STRESSES;

ANODE HOLE INJECTION (AHI); CHARGE PUMPING (CH); HOT CARRIER INJECTION (HCI); INTERFACE TRAPS; REACTION-DIFFUSION (R-D) MODEL; VALENCE-BAND-HOLE TUNNELING (VBHT);

ELECTRON TUNNELING;

EID: 33745665383     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.876310     Document Type: Article

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