Fabrication of three-dimensional hydrogen silsesquioxane resist structure using electron beam lithography

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 6 B, 2006, Pages 5538-5541

  Matsubara, Yasushi ^a   Taniguchi, Jun ^a   Miyamoto, Iwao ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

Electron beam (EB) lithography; Hydrogen silsesquioxane (HSQ); Negative tone resist; Photonic crystal; Spin on glass (SOG); Three dimensional structure

Indexed keywords

CRYSTAL STRUCTURE; ELECTRIC POTENTIAL; ELECTRON BEAM LITHOGRAPHY; HYDROGEN; NANOTECHNOLOGY; SEMICONDUCTING FILMS;

EB ACCELERATION VOLTAGE; ELECTRON BEAM (EB) LITHOGRAPHY; HYDROGEN SILSESQUIOXANE (HSQ); NEGATIVE TONE RESIST; PHOTONIC CRYSTALS; SPIN-ON-GLASS (SOG); THREE-DIMENSIONAL STRUCTURE;

PHOTORESISTORS;

EID: 33745643810     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.5538     Document Type: Review

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