Optimization of etch conditions for a silicon-containing methacrylate based bilayer resist for 193 nm lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3333, Issue , 1998, Pages 122-131

  Steinhäusler, Thomas ^a   Gabor, Allen H ^a   White, Daniela ^a   Blakeney, Andrew J ^a   Stark, David R ^b   Miller, Daniel A ^b   Rich, Georgia K ^b   Graffenberg, Victoria L ^b   Dean, Kim R ^b  

^a Olin Microelectronic Materials   (United States)

^b SEMATECH   (United States)

Author keywords

193 nm; Bilayer resist; Polysilicon etch; Silicon containing methacrylate

Indexed keywords

PHOTORESISTS; POLYMERS; POLYSILICON; THICKNESS MEASUREMENT;

193 NM; 193 NM PHOTORESISTS; 193-NM LITHOGRAPHIES; AROMATIC COMPONENTS; BI LAYERS; BILAYER RESIST; CROSSLINKED; DEPTH OF FOCUS; PLASMA ETCH; SINGLE LAYERS; SUBSTRATE PROFILES; THIN-FILM IMAGING; TOP SURFACE IMAGING;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 33745556269     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.312373     Document Type: Conference Paper

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