Raman spectroscopy of optical phonons as a probe of GaN epitaxial layer structural quality

European Physical Journal B

Volumn 14, Issue 3, 2000, Pages 423-429

  Bulbul M M ^a,b   Smith, S R P ^a   Obradovic, B ^a   Cheng, T S ^c   Foxon, C T ^c  

^a UNIVERSITY OF ESSEX   (United Kingdom)

^b GAZI UNIVERSITY   (Turkey)

^c UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

78.30.Fs III V and II VI semiconductors

Indexed keywords

EID: 0038384854     PISSN: 14346028     EISSN: None     Source Type: Journal    
DOI: 10.1007/s100510051050     Document Type: Article

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