Comparison of GaMnN epilayers prepared by ion implantation and metalorganic chemical vapor deposition

Physica Status Solidi C: Conferences

Volumn 2, Issue 7, 2005, Pages 2441-2445

  Kane, M H ^a,b   Asghar, A ^b   Payne, A M ^b   Vestal, C R ^c   Zhang, Z J ^c   Strassburg, M ^b,d   Senawirante, J ^d   Dietz, N ^d   Summers, C J ^a   Ferguson, I T ^b  

^a Georgia Institute of Technology   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^d GEORGIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; FERMI LEVEL; ION IMPLANTATION; MAGNETIC PROPERTIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; X RAY DIFFRACTION ANALYSIS;

GAMNN EPILAYERS; LATTICE DAMAGE; MAGNETIC HYSTERESIS; MANGANESE PRECURSOR;

GALLIUM COMPOUNDS;

EID: 27344449185     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461482     Document Type: Conference Paper

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