The Fermi level dependence of the optical and magnetic properties of Ga1-xMnxN grown by metal-organic chemical vapour deposition

Journal of Physics Condensed Matter

Volumn 18, Issue 9, 2006, Pages 2615-2622

  Strassburg, M ^a,b   Kane, M H ^b,c   Asghar, A ^b   Song, Q ^d   Zhang, Z J ^d   Senawiratne, J ^a   Alevli, M ^a   Dietz, N ^a   Summers, C J ^c   Ferguson, I T ^b,c  

^a GEORGIA STATE UNIVERSITY   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c Georgia Institute of Technology   (United States)

^d GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FERMI LEVEL; FERROMAGNETISM; MAGNETIZATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SILICON;

GAN BANDGAP; SILICON CO-DOPING;

GALLIUM COMPOUNDS;

EID: 33244497098     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/18/9/001     Document Type: Article

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