Characterization of nanocrystalline silicon carbide films

Journal of Non-Crystalline Solids

Volumn 352, Issue 9-20 SPEC. ISS., 2006, Pages 1410-1415

  Zhang, S ^a   Pereira, L ^a   Hu, Z ^a   Ranieiro, L ^a   Fortonato, E ^a   Ferreira, I ^a   Martins, R ^a  

^a UNIVERSIDADE NOVA DE LISBOA   (Portugal)

Author keywords

Atomic force and scanning tunneling microscopy; Carbon based and nanotubes; Chemical vapor deposition; FT IR measurements; Nanocrystals; Quantum wells; Rutherford backscattering; Wires and dots; X ray diffraction

Indexed keywords

AMORPHOUS SILICON; ANNEALING; ATOMIC FORCE MICROSCOPY; CARBON NANOTUBES; ELECTRIC EXCITATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGEN; METHANE; NANOSTRUCTURED MATERIALS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR QUANTUM WELLS; SILANES; X RAY DIFFRACTION ANALYSIS;

CARBON-BASED AND NANOTUBES; EXCITATION FREQUENCY; HIGH TEMPERATURE ANNEALING; HYDROGEN DILUTION RATIO; NANOCRYSTALS; WIRES AND DOTS;

SILICON CARBIDE;

EID: 33745463684     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2006.02.027     Document Type: Article

References (30)

1. Weiho G., Wong A.S.W., Kang D.-J., and Welland M.E. Nanotechnology 15 (2004) 996
2. Hong W., Shin N., Jen T., Ning S., and Chang C. IEEE Electron. Dev. Lett. 13 (1992) 375
3. Knipp D., Stiebig H., Fölsch J., Finger F., and Wagner H. J. Appl. Phys. 83 (1998) 1463
4. Brüggemann R., Neidlinger T., and Schubert M.B. J. Appl. Phys. 81 (1997) 7666
5. Lam M.P., and Kornegay K.T. IEEE Trans. Electron. Dev. 46 (1998) 546
6. Jung C.K., Lim D.C., Jee H.G., Park M.G., Ku S.J., Yu K.S., Hong B., Lee S.B., and Boo J.H. Surf. Coat. Technol. 171 (2003) 46
7. Matsunami H. Physica B 185 (1993) 65
8. Pensl G., and Choyke W.J. Physica B 185 (1993) 264
9. Shimozuma M., Morikawa N., Nasu M., and Kaneda S. J. Appl. Phys. 68 (1990) 101
10. Yoshino M., Shimozuma M., Date H., Itoh H., and Tagashira H. Thin Solid Films 492 (2005) 207
11. Chew K., Rusli, Yoon S.F., Ahn J., and Ligatchev V. J. Appl. Phys. 92 (2002) 2937
12. Liao F., Park S., Larson J.M., Zachariah M.R., and Girshick S.L. Mater. Lett. 57 (2003) 1982
13. Kerdiles S., Rizk R., Gourbilleau F., Pérez-Rodri{dotless}́guez A., Garrido B., González-Varona O., and Morante J.R. Mater. Sci. Eng. B 69&70 (2000) 530
14. Tabata A., Kuroda M., Mori M., Mizutani T., and Suzuoki Y. J. Non-Cryst. Solids 338&340 (2004) 521
15. Ferreira I., Cabrita A., Fortunato E., and Martins R. Vacuum 64 (2002) 261
16. Lim D.C., Jee H.G., Kim J.W., Moon J.S., Lee S.B., Choi S.S., and Boo J.H. Thin Solid Films 459 (2004) 7
17. Pereyra I., Carreno M., Tabacniks M., Prado R., and Fantini M. J. Appl. Phys. 84 (1998) 2379
18. Hu Z., Liao X., Diao H., Kong G., Zeng X., and Xu Y. J. Cryst. Growth 264 (2004) 7
19. Ramos A.R., Paúl A., Rijniers L., da Silva M.F., and Soares J.C. Nucl. Instrum. Meth. Phys. Res. B 190 (2002) 95
20. Barradas N.P., Jeynes C., and Webb R.P. Appl. Phys. Lett. 71 (1997) 291
21. Mahan A.H., Yang J., Guha S., and Willianmson D.L. Phys. Rev. B 61 (2000) 1677
22. Kim D.S., and Lee Y.H. Thin Solid Films 261 (1995) 192
23. Chu V., Conde J.P., Jarego J., Brogueira P., Rodriguez J., Barradas N., and Soares J.C. J. Appl. Phys. 78 (1995) 3164
24. Rajagopalan T., Wang X., Lahlouh B., and Ramkumar C. J. Appl. Phys. 94 (2003) 5252
25. Kerdiles S., Berthelot A., Gourbilleau F., and Rizk R. Appl. Phys. Lett. 76 (2000) 2373
26. Kusumori T., Muto H., and Brito M.E. Appl. Phys. Lett. 84 (2004) 1272
27. Kong J., Soh H.T., Cassell A.M., Quate C.F., and Dai H. Nature 395 (1998) 878
28. Fan S., Champline M.G., Franklin N.R., Tombler T.W., Cassell A.M., and Dai H. Science 283 (1999) 512
29. Li W.Z., Xie S.S., Qian L.X., Chang B.H., Zou B.S., Zhou W.Y., Zhao R.A., and Wang G. Science 274 (1996) 1701
30. Kusunoki M., Suzuki T., Hirayama T., and Shibata N. Appl. Phys. Lett. 77 (2000) 531