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Thin Solid Films

Volumn 492, Issue 1-2, 2005, Pages 207-211

Deposition of SiC films by ion-enhanced plasma chemical vapor deposition using tetramethylsilane + H2

(5) Yoshino, M a Shimozuma, M b Date, H b Itoh, H c Tagashira, H c

a HOKKAIDO POLYTECHNIC COLLEGE (Japan)

b HOKKAIDO UNIVERSITY (Japan)

c MURORAN INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

Chemical vapor deposition (CVD); Ion enhanced triode plasma CVD; Low temperature plasma processing; Silicon carbide (SiC)

Indexed keywords

CHEMICAL BONDS; CHEMICAL REACTORS; CRYSTAL ORIENTATION; FILM GROWTH; INFRARED RADIATION; ION BEAM ASSISTED DEPOSITION; LIGHT TRANSMISSION; MIXTURES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX; SILANES; SILICON CARBIDE; TRIODES; X RAY DIFFRACTION;

ION-ENHANCED PLASMA CHEMICAL VAPOR DEPOSITION; LOW TEMPERATURE PLASMA PROCESSING; VICKERS HARDNESS; X-RAY DIFFRACTION PATTERNS;

THIN FILMS;

EID: 25644449008 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2005.06.097 Document Type: Article

Times cited : (14)

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