Band gap control of hydrogenated amorphous silicon carbide films prepared by hot-wire chemical vapor deposition

Journal of Non-Crystalline Solids

Volumn 338-340, Issue 1 SPEC. ISS., 2004, Pages 521-524

  Tabata, A ^a   Kuroda, M ^a   Mori, M ^a   Mizutani, T ^a   Suzuoki, Y ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; AMORPHOUS SILICON; CARBON; CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; ENERGY GAP; FLOW OF FLUIDS; HYDROGENATION; INFRARED SPECTROSCOPY; METALLIC FILMS; METHANE;

FILM STRUCTURE; GAS FLOW RATES; HOT-WIRE CHEMICAL VAPOR DEPOSITION (HWCVD); OPTICAL BAND GAP;

SILICON CARBIDE;

EID: 2942556886     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2004.03.033     Document Type: Conference Paper

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