Raman scattering study of GaN nanostructures obtained by bottom-up and top-down approaches

Journal of Physics Condensed Matter

Volumn 18, Issue 26, 2006, Pages 5825-5834

  Milekhin, A G ^a   Meijers, R J ^b   Richter, T ^b   Calarco, R ^b   Montanari, S ^b   Luth H ^b   Sierra, B A Paez ^c   Zahn, D R T ^c  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON CYCLOTRON RESONANCE; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; PLASMAS; RAMAN SCATTERING; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; THIN FILMS;

GAN NANOSTRUCTURES; MICRO-RAMAN SCATTERING; NANOCOLUMNAR STRUCTURES; VIBRATIONAL SPECTRUM;

NANOSTRUCTURED MATERIALS;

EID: 33745308794     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/18/26/003     Document Type: Article

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