Cross-sectional transmission electron microscopy of interface structure of β-FeSi2/Si(100) prepared by ion beam sputter deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 6 A, 2006, Pages 4929-4933

  Sasase, Masato ^a   Shimura, Kenichiro ^b   Yamamoto, Hiroyuki ^b   Yamaguchi, Kenji ^b   Shamoto, Shin Ichi ^b   Hojou, Kiichi ^b  

^a WAKASA WAN ENERGY RESEARCH CENTER   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

FeSi2; Cross sectional transmission electron microscope; Ion beam sputter deposition; Sputter Ne+ etching; Surface treatment; Thin films

Indexed keywords

ANNEALING; ETCHING; HIGH RESOLUTION ELECTRON MICROSCOPY; ION BEAM ASSISTED DEPOSITION; IRON COMPOUNDS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

Β-FESI2; CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPE; ION BEAM SPUTTER DEPOSITION; SPUTTER NE+ ETCHING;

SILICON;

EID: 33745268453     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.4929     Document Type: Article

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