Nonparabolicity effect on bulk transport properties in wurtzite InN

Journal of Applied Physics

Volumn 99, Issue 11, 2006, Pages

  Polyakov, V M ^a   Schwierz, F ^a  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRON ENERGY LEVELS; ELECTRON MOBILITY; ELECTRON TRANSPORT PROPERTIES; MONTE CARLO METHODS;

DIFFERENTIAL MOBILITY; DRIFT VELOCITY; NONPARABOLICITY; WURTZITE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 33745260381     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2201752     Document Type: Article

References (28)

1. J. G. Ruch, IEEE Trans. Electron Devices 19, 652 (1972).
2. J. R. Hauser, T. H. Glisson, and M. A. Littlejohn, Solid-State Electron. 22, 487 (1979).
3. J. Y.-F. Tang and K. Hess, IEEE Trans. Electron Devices 29, 1906 (1982).
4. K. Brennan, K. Hess, and G. J. Iafrate, J. Appl. Phys. 55, 3632 (1984).
5. J. S. Moore and P. Das, J. Appl. Phys. 56, 375 (1984).
6. B. E. Foutz, L. F. Eastman, U. V. Bhapkar, and M. S. Shur, Appl. Phys. Lett. 70, 2849 (1997).
7. J. Kolnik, I. H. Oguzman, and K. F. Brennan, J. Appl. Phys. 78, 1033 (1995).
8. J. D. Albrecht, R. P. Wang, P. P. Ruden, M. Farahmand, and K. F. Brennan, J. Appl. Phys. 83, 4777 (1998).
9. U. V. Bhapkar and M. S. Shur, J. Appl. Phys. 82, 1649 (1997).
10. E. W. S. Caetano, R. N. Costa Filho, V. N. Freire, and J. A. P. da Costa, Solid State Commun. 110, 469 (1999).
11. S. Yamakawa, S. Aboud, M. Saraniti, and S. M. Goodnick, Semicond. Sci. Technol. 19, S475 (2004).
12. S. K. O' Leary, B. E. Foutz, M. S. Shur, U. V. Bhapkar, and L. F. Eastman, J. Appl. Phys. 83, 826 (1998).
13. E. Bellotti, B. K. Doshi, K. F. Brennan, J. D. Albrecht, and P. P. Ruden, J. Appl. Phys. 85, 916 (1999).
14. B. E. Foutz, S. K. O'Leary, M. S. Shur, and L. F. Eastman, J. Appl. Phys. 85, 7727 (1999).
15. C. Bulutay and B. K. Ridley, Superlattices Microstruct. 36, 465 (2004).
16. V. M. Polyakov, F. Schwierz, D. Fritsch, and H. Schmidt, Phys. Status Solidi C 3, 598 (2006).
17. S. Krishnamurthy, M. Schilfgaarde, A. Sher, and A.-B. Chen, Appl. Phys. Lett. 71, 1999 (1997).
18. M. Wraback, Appl. Phys. Lett. 82, 3674 (2003).
19. J. T. Lü and J. C. Cao, Semicond. Sci. Technol. 19, 4518 (2004).
20. V. Y. Davydov, Phys. Status Solidi B 229, R1 (2002).
21. A. A. Klochikhin, V. Y. Davydov, V. V. Emtsev, A. V. Sakharov, V. A. Kapitonov, B. A. Andreev, H. Lu, and W. J. Schaff, Phys. Rev. B 71, 195207 (2005).
22. K. M. Yu, Appl. Phys. Lett. 86, 071910 (2005).
23. I. Mahboob, T. D. Veal, L. F. J. Piper, C. F. McConville, H. Lu, W. J. Schaff, J. Furthmüller, and F. Bechstedt, Phys. Rev. B 69, 201307 (2004).
24. D. Fritsch, H. Schmidt, and M. Grundmann, Phys. Rev. B 69, 165204 (2004).
25. J. S. Thakur, D. Haddad, V. M. Naik, R. Naik, G. W. Auner, H. Lu, and W. J. Schaff, Phys. Rev. B 71, 115203 (2005).
26. E. Conwell and V. P. Weisskopf, Phys. Rev. 77, 388 (1950).
27. K. Tomizawa, Numerical Simulation of Submicron Semiconductor Devices (Artech House, Boston, 1993).
28. N. Fitzer, A. Kuligk, R. Redmer, M. Städele, S. M. Goodnick, and W. Schattke, Phys. Rev. B 67, 201201 (R) (2003).