Low-threshold AlGaN-GaN heterostructure field effect transistors for digital applications

Electronics Letters

Volumn 34, Issue 25, 1998, Pages 2367-2368

  Gaska, R ^a   Deng, J ^b   Shur, M S ^b  

^a APA Inc   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; DIGITAL INTEGRATED CIRCUITS; ELECTRIC BREAKDOWN; ELECTRIC INVERTERS; HETEROJUNCTIONS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; VOLTAGE MEASUREMENT;

DIGITAL INVERTER CIRCUITS; HETEROSTRUCTURE FIELD EFFECT TRANSISTORS; SWITCHING VOLTAGE;

FIELD EFFECT TRANSISTORS;

EID: 0032275834     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19981665     Document Type: Article

References (6)

1. GASKA, R., BYKHOVSKI, A.D., SHUR, M.S., YANG, J., and OSINSKY, A.: 'Piezoeffect and gate current in AlGaN/GaN high electron mobility transistors', Appl. Phys. Lett., 1997, 71, pp. 3673-3675
2. ASIF KHAN, M., CHEN, Q., SUN, C.J., YANG, J.W., BLASINGAME, M., SHUR, M.S., and PARK, H.: 'Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors', Appl. Phys. Lett., 1996, 68, (4) pp. 514-516
3. GASKA, R., CHEN, Q., ASIF KHAN, M., PING, A., ADESIDA, I., and SHUR, M.S.: 'AlGaN-GaN heterostructure FETs with offset gate design', Electron. Lett., 1997, 33, (14) pp. 1255-1257
4. WU, Y.-F., KELLER, B.P., KELLER, S., KAPOLNEK, D., KOZODOY, P., DENBAARS, S.P., and MISHRA, U.K.: 'Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors', Appl. Phys. Lett., 1996, 69, (10) pp. 1438-1440
5. BROWN, R.B., and WU, K.: 'High temperature operation of silicon MOSFETs' in WILLANDER, M., and HARTNAGEL, H.L. (Eds.): 'High temperature electronics' (Chapman and Hall, 1996), p. 67
6. FJELDLY, T., YTTERDAL, T., and SHUR, M.S.: 'Introduction to device and circuit modeling for VLSI' (John Wiley and Sons, New York, 1998)