Integration of MOCVD SBT stacked ferroelectric capacitors in a 0.35 μm CMOS technology

Integrated Ferroelectrics

Volumn 66, Issue , 2004, Pages 71-83

  Maes, D ^a   Everaert, J L ^a   Goux, L ^a   Lisoni, J G ^a   Paraschiv, V ^a   Schwitters, M ^a   Haspeslagh, L ^a   Wouters, D J ^a   Artoni, C ^b   Caputa, C ^b   Casella, P ^b   Corallo, G ^b   Russo, G ^b   Zambrano, R ^b   Monchoix, H ^c   Van Autryve, L ^c  

^a CMOS Device Research Group   (Belgium)

^b STMICROELECTRONICS   (Italy)

^c Applied Materials France   (France)

Author keywords

3D; FeRAM; Hydrogen barrier; Integration; MOCVD; Oxygen barrier; SBT

Indexed keywords

CAPACITORS; CMOS INTEGRATED CIRCUITS; EMBEDDED SYSTEMS; HYSTERESIS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RANDOM ACCESS STORAGE;

FERAM; FERROELECTRIC CAPACITORS; HYDROGEN BARRIERS; OXYGEN BARRIERS;

FERROELECTRIC DEVICES;

EID: 33745134614     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580490894753     Document Type: Article

References (16)

1. The International Technology Roadmap for Semiconductors 2003, Process Integration, Devices & Structures; Non-volatile Memory Technology Requirements.
2. R. Zambrano, Integrated Ferroelectrics 53, 247 (2003).
3. M. Shimizu, K. Kita, H. Fujisawa, H. Niu, MRS Symp. Proc. 655 "Ferroelectric Thin Films IX" CC1.10 (2001).
4. S. Narayan, "Characterization of MOCVD-SBT films for 3-dimensionalstackcapacitors," Presented at the 15th International Symposium on Integrated Ferroelectrics (2003).
5. Y. Park, C. R. Cho, J. M. Koo, S. Shin, J. K. Lee, S. P. Kim, S. H. Park, J. H. Lee, and Y. J. Cho, "Preparation of PZT films on trench structure for high-density ferroelectric random access memory," Presented at the 16th International Symposium on Integrated Ferroelectrics (2004).
6. M. Schumacher, J. Lindner, P. K. Baumann, F. Schienle, N. Solayappan, V. Joshi, C. A. Araujo, and L. D. McMillan, Materials Science in Semiconductor Processing 5(2-3), 85 (2002).
7. J. A. Johnson, J. G. Lisoni, and D. J. Wouters, Microelec. Engineering 70, 377 (2003).
8. Y. Shimamoto, K. Kushida-Abdelghafar, H. Miki, and Y. Fujisaki, Applied Physics Letters 70(23), 3096 (1997).
9. W. Hartner, P. Bosk, G. Schindler, H. Bachhofer, M. Mort, H. Wendt, T. Mikolajick, C. Dehm, H. Schroeder, and R. Waser, Applied Physics A (Materials Science Processing) A77(3-4), 571 (2003).
10. D. J. Jung, B. G. Jeon, H. H. Kim, Y. J. Song, B. J. Koo, S. Y. Lee, S. O. Park, Y. W. Park, and K. Kim, IEEE International Electron Devices Meeting 1999, Technical Digest, 279.
11. Y. Nagano, T. Mikawa, T. Kutsunai, S. Hayashi, T. Nasu, S. Natsume, T. Tatsunari, T. Ito, S. Goto, H. Yano, A. Noma, K. Nagahashi, T. Miki, M. Sakagami, Y. Izutsu, T. Nakakuma, H. Hirano, S. Iwanari, Y. Murakuki, K. Yamaoka, Y. Goho, Y. Judai, E. Fujii, and K. Sato, 2005 Symposium on VLSI Technology; Digest of Technical Papers, 171.
12. S. H. Oh, S. K. Hong, J. G. Kim, J. Y. Seong, Y. J. Park, and D. W. Leeb, Applied Physics Letters 81(22), 4230 (2002).
13. N. W. Jang, Y. J. Song, H. H. Kim, H. J. Joo, J. H. Park, H. Y. Kang, S. Y. Lee, K. Kim, Integrated Ferroelectrics 53, 299 (2003).
14. J. G. Lisoni, K. Wafer, J. A. Johnson, L. Goux, M. Schwitters, V. Paraschiv, D. Macs, L. Haspeslagh, C. Caputa, R. Zambrano, D. J. Wouters, to be published in MRS Symp. Proc. 784 "Ferroelectric Thin Films XII" (2004).
15. S. H. Oh, S. K. Hong, K. H. Noh, S. Y. Kweon, N. K. Kim, Y. H. Yang, J. G. Kim, J. Y. Seong, I. W. Jang, S. H. Park, K. H. Bang, K. N. Lee, H. J. Jeong, J. H. Son, S. S.Lee, E. S. Choi, H. J. Sun, S. J. Yeom, K. D. Ban, J. W. Park, G. D. Park, S. Y. Song, J. H. Shin, S. I. Lee, and Y. J. Park, IEEE International Electron Devices Meeting 2003, 34(5), 1-4.
16. H. H. Kim, Y. J. Song, S. Y. Lee, H. J. Joo, N. W. Jang, D. J. Jung, Y. S. Park, S. O. Park, K. M. Lee, S. H. Joo, S. W. Lee, S. D. Nam, and K. Kim, 2002 Symposium on VLSI Technology; Digest of Technical Papers, 210.