MOCVD for complex multicomponent thin films - A leading edge technology for next generation devices

Materials Science in Semiconductor Processing

Volumn 5, Issue 2-3, 2002, Pages 85-91

  Schumacher, M ^a   Lindner, J ^a   Baumann, P K ^a   Schienle, F ^a   Solayappan, N ^b   Joshi, V ^b   Araujo, C A ^b   McMillan, L D ^b  

^a AIXTRON AG   (Germany)

^b Symetrix Corporation   (United States)

Author keywords

Ceramic; Ferroelectric memories; Metal organic chemical vapor deposition; Thin films

Indexed keywords

CERAMIC MATERIALS; COMPOSITION; DECOMPOSITION; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION;

VOLATILE MEMORY;

THIN FILMS;

EID: 0036557702     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(02)00086-0     Document Type: Conference Paper

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