Degradation of ferroelectric properties in integrated Pt/SrBi2Ta2O9/Pt capacitor by impurity diffusion from interlevel dielectric layer

Applied Physics Letters

Volumn 81, Issue 22, 2002, Pages 4230-4232

  Oh, Sang Hyun ^a   Hong, Suk Kyoung ^a   Kim, Jin Gu ^a   Seong, Jin Yong ^a   Park, Young Jin ^a   Lee, Deok Won ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEGRADATION; DOPING (ADDITIVES); ENERGY DISPERSIVE SPECTROSCOPY; FERROELECTRICITY; INTERDIFFUSION (SOLIDS); INTERFACES (MATERIALS); NANOSTRUCTURED MATERIALS; PLATINUM; POLARIZATION; SILICATES; TRANSMISSION ELECTRON MICROSCOPY;

INTERLEVEL DIELECTRIC LAYERS;

CAPACITORS;

EID: 0037175963     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1525060     Document Type: Article

References (8)

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