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Applied Physics Letters

Volumn 88, Issue 22, 2006, Pages

Effects of strain on the optimal annealing temperature of GaInNAsSb quantum wells

(5) Yuen, Homan B a Bank, Seth R a Bae, Hopil a Wistey, Mark A a Harris Jr , James S a

a Stanford University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURE; LATTICE STRAIN; LUMINESCENT EFFICIENCY; NITRIDE ALLOYS;

ANNEALING; ANTIMONY; CRYSTAL LATTICES; INDIUM; NITRIDES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33744822454 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2208937 Document Type: Article

Times cited : (12)

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