-
1
-
-
0032685221
-
Electrically-pumped, single-epitaxial VCSELs at1.55 μm with Sb-based mirrors
-
Hall, E., Almuneau, G., Kim, J.K., Sjolund, O., Kroemer, H., and Coldren, L.A.: ' Electrically-pumped, single-epitaxial VCSELs at1.55 μm with Sb-based mirrors ', Electron. Lett., 1999, 35, (16), p. 1337-1338
-
(1999)
Electron. Lett.
, vol.35
, Issue.16
, pp. 1337-1338
-
-
Hall, E.1
Almuneau, G.2
Kim, J.K.3
Sjolund, O.4
Kroemer, H.5
Coldren, L.A.6
-
2
-
-
0037380486
-
InP-based VCSEL technology covering the wavelength range from 1.3 to 2.0 μm
-
Boehm, G., Ortsiefer, M., Shau, R., Rosskopf, J., Lauer, C., Maute, M., Kohler, F., Mederer, F., Meyer, R., and Amann, M.C.: ' InP-based VCSEL technology covering the wavelength range from 1.3 to 2.0 μm ', J. Cryst. Growth, 2003, 251, p. 748-753
-
(2003)
J. Cryst. Growth
, vol.251
, pp. 748-753
-
-
Boehm, G.1
Ortsiefer, M.2
Shau, R.3
Rosskopf, J.4
Lauer, C.5
Maute, M.6
Kohler, F.7
Mederer, F.8
Meyer, R.9
Amann, M.C.10
-
3
-
-
6744245576
-
Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 μm
-
Choquette, K.D., Klem, J.F., Fischer, A.J., Blum, O., Allerman, A.A., Fritz, I.J., Kurtz, S.R., Breiland, W.G., Sieg, R., Geib, K.M., Scott, J.W., and Naone, R.L.: ' Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 μm ', Electron. Lett., 2000, 36, (16), p. 1388-1390
-
(2000)
Electron. Lett.
, vol.36
, Issue.16
, pp. 1388-1390
-
-
Choquette, K.D.1
Klem, J.F.2
Fischer, A.J.3
Blum, O.4
Allerman, A.A.5
Fritz, I.J.6
Kurtz, S.R.7
Breiland, W.G.8
Sieg, R.9
Geib, K.M.10
Scott, J.W.11
Naone, R.L.12
-
4
-
-
3242667306
-
GaInNAs(Sb) vertical-cavity surface-emitting lasers at 1.46 μm
-
Wistey, M.A., Bank, S.R., Yuen, H.B., Goddard, L.L., and Harris, J.S.: ' GaInNAs(Sb) vertical-cavity surface-emitting lasers at 1.46 μm ', J. Vac. Sci. Technol. B, 2004, 22, (3), p. 1562-1564
-
(2004)
J. Vac. Sci. Technol. B
, vol.22
, Issue.3
, pp. 1562-1564
-
-
Wistey, M.A.1
Bank, S.R.2
Yuen, H.B.3
Goddard, L.L.4
Harris, J.S.5
-
5
-
-
30344432092
-
C-Band emission from a GaInNAsSb VCSEL on GaAs
-
Laurand, N., Calvez, S., Sun, H., Dawson, M., Gupta, J., and Aers, G.: ' C-Band emission from a GaInNAsSb VCSEL on GaAs ', Electron. Lett., 2006, 42, (1), p. 38-39
-
(2006)
Electron. Lett.
, vol.42
, Issue.1
, pp. 38-39
-
-
Laurand, N.1
Calvez, S.2
Sun, H.3
Dawson, M.4
Gupta, J.5
Aers, G.6
-
6
-
-
18444385104
-
Low threshold InGaAsN/GaAs lasers beyond 1500 nm
-
Jaschke, G., Averbeck, R., Geelhaar, L., and Riechert, H.: ' Low threshold InGaAsN/GaAs lasers beyond 1500 nm ', J. Crystal Growth, 2005, 278, p. 224-228
-
(2005)
J. Crystal Growth
, vol.278
, pp. 224-228
-
-
Jaschke, G.1
Averbeck, R.2
Geelhaar, L.3
Riechert, H.4
-
7
-
-
30844437504
-
1.55 μm GaInNAsSb lasers on GaAs
-
Bank, S.R., Wistey, M.A., Goddard, L.L., Yuen, H.B., Bae, H.P., and Harris, J.S.: ' 1.55 μm GaInNAsSb lasers on GaAs ', Proc. Conf. on Lasers and Electro-optics (CLEO), 2005
-
(2005)
Proc. Conf. on Lasers and Electro-optics (CLEO)
-
-
Bank, S.R.1
Wistey, M.A.2
Goddard, L.L.3
Yuen, H.B.4
Bae, H.P.5
Harris, J.S.6
-
8
-
-
13844275961
-
1.53 μm GaInNAsSb laser diodes grown on GaAs(100)
-
Gupta, J.A., Barrios, P.J., Zhang, X., Pakulski, G., and Wu, X.: ' 1.53 μm GaInNAsSb laser diodes grown on GaAs(100) ', Electron. Lett., 2005, 41, (2), p. 71-72
-
(2005)
Electron. Lett.
, vol.41
, Issue.2
, pp. 71-72
-
-
Gupta, J.A.1
Barrios, P.J.2
Zhang, X.3
Pakulski, G.4
Wu, X.5
-
9
-
-
10644266122
-
GaInNAs(Sb) long wavelength communications lasers
-
Harris, J.S., Bank, S.R., Wistey, M.A., and Yuen, H.B.: ' GaInNAs(Sb) long wavelength communications lasers ', IEE Proc., Optoelectron., 2004, 151, (5), p. 407-416
-
(2004)
IEE Proc., Optoelectron.
, vol.151
, Issue.5
, pp. 407-416
-
-
Harris, J.S.1
Bank, S.R.2
Wistey, M.A.3
Yuen, H.B.4
-
10
-
-
0029732198
-
Design of flat-band AlGaAs heterojunction Bragg reflectors
-
Yechuri, S.S., Shieh, T.-J.B., and Johnson, R.H.: ' Design of flat-band AlGaAs heterojunction Bragg reflectors ', IEEE Trans. Electron Devices, 1996, 43, (1), p. 40-46
-
(1996)
IEEE Trans. Electron Devices
, vol.43
, Issue.1
, pp. 40-46
-
-
Yechuri, S.S.1
Shieh, T.-J.B.2
Johnson, R.H.3
-
11
-
-
32044473701
-
Room-temperature continuous-wave 1.55 μm GaInNAsSb laser on GaAs
-
Bank, S.R., Bae, H.P., Yuen, H.B., Wistey, M.A., Goddard, L.L., and Harris, J.S., Jr.: ' Room-temperature continuous-wave 1.55 μm GaInNAsSb laser on GaAs ', Electron. Lett., 2006, 42, (3), p. 156-157
-
(2006)
Electron. Lett.
, vol.42
, Issue.3
, pp. 156-157
-
-
Bank, S.R.1
Bae, H.P.2
Yuen, H.B.3
Wistey, M.A.4
Goddard, L.L.5
Harris Jr., J.S.6
-
12
-
-
31144473875
-
Protecting wafer during plasma ignition by use of an arsenic cap
-
Wistey, M.A., Bank, S.R., Yuen, H.B., Goddard, L.L., and Harris, J.S.: ' Protecting wafer during plasma ignition by use of an arsenic cap ', J. Vac. Sci. Technol. B, 2005, 23, (3), p. 1324-1327
-
(2005)
J. Vac. Sci. Technol. B
, vol.23
, Issue.3
, pp. 1324-1327
-
-
Wistey, M.A.1
Bank, S.R.2
Yuen, H.B.3
Goddard, L.L.4
Harris, J.S.5
-
13
-
-
33644747480
-
MOVPE growth, phonons, band-to-band transitions and dielectric functions of InGaNAs/GaAs superlattices and quantum wells
-
Cay, W., et al. (Eds.),(Transworld Research Network)
-
Leibiger, G., Gottschalch, V., Benndorf, G., Sik, J., and Schubert, M.: ' MOVPE growth, phonons, band-to-band transitions and dielectric functions of InGaNAs/GaAs superlattices and quantum wells ', Cay, W., et al. (Eds.) Compound semiconductor heterojunctions: physics and applications, (Transworld Research Network 2003)
-
(2003)
Compound Semiconductor Heterojunctions: Physics and Applications
-
-
Leibiger, G.1
Gottschalch, V.2
Benndorf, G.3
Sik, J.4
Schubert, M.5
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