Doping behaviour of Si, Te, Zn and Mg in lattice-matched (GaIn)(NAs)/GaAs bulk films

Journal of Crystal Growth

Volumn 248, Issue SUPPL., 2003, Pages 451-456

  Volz, K ^a   Koch, J ^a   Kunert, B ^a   Stolz, W ^a  

^a PHILIPPS UNIVERSITY MARBURG   (Germany)

Author keywords

A1. Doping; A3. Metalorganic vapor phase epitaxy; B1. (GaIn)(NAs)

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC PROPERTIES; LATTICE CONSTANTS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SUBSTRATES;

HOLE CONCENTRATIONS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0037292519     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01882-1     Document Type: Conference Paper

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