Supply and threshold-voltage trends for scaled logic and SRAM MOSFETs

IEEE Transactions on Electron Devices

Volumn 53, Issue 6, 2006, Pages 1427-1432

  Morifuji, Eiji ^a   Yoshida, Takeshi ^a   Kanda, Masahiko ^a   Matsuda, Satoshi ^a   Yamada, Seiji ^a   Matsuoka, Fumitomo ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

CMOS memory integrated circuits; CMOSFET logic devices; Logic devices; Power consumption; SRAM chips

Indexed keywords

CMOS INTEGRATED CIRCUITS; ENERGY DISSIPATION; ESTIMATION; GATES (TRANSISTOR); HIGH TEMPERATURE OPERATIONS; STATIC RANDOM ACCESS STORAGE; THRESHOLD VOLTAGE;

HIGH BIT LEAKAGE; INVERTER GATES; LOWER POWER-DISSIPATION;

MOSFET DEVICES;

EID: 33744811444     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.874752     Document Type: Article

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