V-Band HJFET MMIC DROs with low phase noise, high power, and excellent temperature stability

IEEE Transactions on Microwave Theory and Techniques

Volumn 51, Issue 11, 2003, Pages 2250-2258

  Hosoya, Ken'ichi ^a   Ohata, Keiichi ^a   Funabashi, Masahiro ^a   Inoue, Takashi ^a   Kuzuhara, Masaaki ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Dielectric resonator oscillators (DROs); Dielectric resonators (DRs); Field effect transistors (FETs); Millimeter wave; Monolithic microwave integrated circuits (MMICs); Oscillators

Indexed keywords

BARIUM COMPOUNDS; DIELECTRIC DEVICES; FIELD EFFECT TRANSISTORS; MILLIMETER WAVES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; RESONATORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SPURIOUS SIGNAL NOISE; THERMODYNAMIC STABILITY;

HETEROJUNCTION FIELD EFFECT TRANSISTORS; MONOLITHIC MICROWAVE INTEGRATED CIRCUIT DIELECTRIC-RESONATOR OSCILLATORS; PHASE NOISE;

MICROWAVE OSCILLATORS;

EID: 0242636455     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2003.818937     Document Type: Article

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