High transconductance of 2.25 S/mm observed at 16 K for 195-nm-Gate In0.75Ga0.25As/In0.52 Al0.48As HEMT fabricated on (411)A-oriented InP substrate

IEEE Electron Device Letters

Volumn 26, Issue 7, 2005, Pages 425-428

  Watanabe, Issei ^a,b   Shinohara, K ^b,c   Kitada, T ^a   Shimomura, S ^a   Yamashita, Y ^d   Endoh, A ^d   Mimura, T ^d   Matsui, T ^b   Hiyamizu, S ^a  

^a OSAKA UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

^c ROCKWELL SCIENTIFIC COMPANY   (United States)

^d FUJITSU LABORATORIES LTD   (Japan)

Author keywords

(411)A super flat interfaces; (411)A oriented InP; Cutoff frequency (fT); High electron mobility transistor (HEMT); InGaAs InAlAs; Molecular beam epitaxy (MBE); Pseudomorphic; Transconductance (gm)

Indexed keywords

INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES; SURFACE ROUGHNESS; TRANSCONDUCTANCE;

INTERFACE ROUGHNESS SCATTERING; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR (PHEMT); SUPER-FLAT INTERFACES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 22944476447     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.851234     Document Type: Article

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