Hot carrier generation and reliability of BT(body-Tied)-fin type SRAM cell transistors (Wfin=20-70nm)

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2005, Pages 352-355

  Ahn, Young Joon ^a   Cho, Hye Jin ^a   Kang, Hee Soo ^a   Lee, Choong Ho ^a   Lee, Chul ^a   Yoon, Jae Man ^a   Kim, Tae Yong ^a   Cho, Eun Suk ^a   Sung, Suk Kang ^a   Park, Donggun ^a   Kim, Kinam ^a   Ryu, Byung Il ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

HOT CARRIER GENERATION; SRAM CELL TRANSISTORS;

HOT CARRIERS; MOSFET DEVICES; RELIABILITY; SILICON;

STATIC RANDOM ACCESS STORAGE;

EID: 28744443129     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

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3. T. Park, et al., IEDM Tech. Dig., (2003), p.27
4. Y. -K. Choi, et al., IEDM Tech. Dig., (2003), p.177
5. T.Y.Chan, et al., EDL., (1985), p. 551