Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxide

IEEE Transactions on Electron Devices

Volumn 48, Issue 5, 2001, Pages 1010-1013

  Guan, Hao ^a   Cho, Byung Jin ^a   Li, M F ^a   Xu, Zhen ^a   He, Y D ^a   Dong, Zhong ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CONSTANT CURRENT STRESS; QUASIBREAKDOWN; STRESS INDUCED LEAKAGE CURRENTS; ULTRATHIN OXIDE;

CRYSTAL DEFECTS; CURRENT DENSITY; ELECTRIC BREAKDOWN; GATES (TRANSISTOR); INTERFACES (MATERIALS); LEAKAGE CURRENTS; MOS CAPACITORS; MOSFET DEVICES; STRESSES;

CMOS INTEGRATED CIRCUITS;

EID: 0035340575     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.918254     Document Type: Article

References (13)