Growth of high quality epitaxial Si 1-x-y Ge x C y layers by using chemical vapor deposition

Applied Surface Science

Volumn 224, Issue 1-4, 2004, Pages 46-50

  Hallstedt J ^a   Suvar, E ^a   Persson, P O A ^b   Hultman, L ^b   Wang, Y B ^a   Radamson, H H ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

Chemical vapor deposition; Epitaxy; High resolution reciprocal lattice mapping; SiGeC alloys

Indexed keywords

CARBON; CHEMICAL REACTORS; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; ELECTRON MOBILITY; EPITAXIAL GROWTH; LATTICE CONSTANTS; REACTION KINETICS; SECONDARY ION MASS SPECTROMETRY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

HIGH-RESOLUTION RECIPROCAL LATTICE MAPPING; SIGEC ALLOYS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 1142280329     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2003.08.026     Document Type: Conference Paper

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