-
1
-
-
33744773586
-
-
The International Technology Roadmap for Semiconductor, Update. [Online]. Available
-
The International Technology Roadmap for Semiconductor, 2004 Update. [Online]. Available: http://public.itrs.net
-
(2004)
-
-
-
2
-
-
0032254786
-
"Suppression of reverse short channel effect by a buried carbon layer"
-
Dec
-
H.-J. Gossmann, C. S. Rafferty, G. Hobler, H.-H. Vuong, D. C. Jacobson, and M. Frei, "Suppression of reverse short channel effect by a buried carbon layer," in IEDM Tech. Dig., Dec. 1998, pp. 725-728.
-
(1998)
IEDM Tech. Dig.
, pp. 725-728
-
-
Gossmann, H.-J.1
Rafferty, C.S.2
Hobler, G.3
Vuong, H.-H.4
Jacobson, D.C.5
Frei, M.6
-
3
-
-
21644456208
-
"Double SiGe:C diffusion barrier channel 40 nm CMOS with improved short-channel performances"
-
Dec
-
F. Ducroquet, T. Ernst, J.-M. Hartmann, O. Weber, F. Andrieu, P. Holliger, F. Laugier, P. Rivallin, G. Guégan, D. Lafond, C. Laviron, V. Carron, L. Brévard, C. Tabone, D. Bouchu, A. Toffoli, J. Cluzel, and S. Deleonibus, "Double SiGe:C diffusion barrier channel 40 nm CMOS with improved short-channel performances," in IEDM Tech. Dig., Dec. 2004, pp. 437-440.
-
(2004)
IEDM Tech. Dig.
, pp. 437-440
-
-
Ducroquet, F.1
Ernst, T.2
Hartmann, O.3
Weber, O.4
Andrieu, P.5
Holliger, F.6
Laugier, F.7
Rivallin, P.8
Guégan, G.9
Lafond, D.10
Laviron, C.11
Carron, V.12
Brévard, L.13
Tabone, C.14
Bouchu, D.15
Toffoli, A.16
Cluzel, J.17
Deleonibus, S.18
-
4
-
-
0001666794
-
"Carbon-induced undersaturation of silicon self-interstitials"
-
Jan
-
R. Scholz, U. Gosele, J.-Y. Huh, Anam-Dong, and T. Y. Tan, "Carbon-induced undersaturation of silicon self-interstitials," Appl. Phys. Lett., vol. 72, no. 2, pp. 200-202, Jan. 1998.
-
(1998)
Appl. Phys. Lett.
, vol.72
, Issue.2
, pp. 200-202
-
-
Scholz, R.1
Gosele, U.2
Huh, J.-Y.3
Anam-Dong4
Tan, T.Y.5
-
5
-
-
79956037480
-
0.002 due to silicon self-interstitial injection during oxidation"
-
Aug
-
0.002 due to silicon self-interstitial injection during oxidation," Appl. Phys. Lett., vol. 81, no. 7, pp. 1225-1227, Aug. 2002.
-
(2002)
Appl. Phys. Lett.
, vol.81
, Issue.7
, pp. 1225-1227
-
-
Carroll, M.S.1
Sturm, J.C.2
-
6
-
-
0011951370
-
"Effects of carbon implantation on generation lifetime in silicon"
-
Jan
-
I. Ban,M. C. Ozturk, K. Christensen, and D.M. Maher, "Effects of carbon implantation on generation lifetime in silicon," Appl. Phys. Lett., vol. 68, no. 4, pp. 499-501, Jan. 1996.
-
(1996)
Appl. Phys. Lett.
, vol.68
, Issue.4
, pp. 499-501
-
-
Ban, I.1
Ozturk, M.C.2
Christensen, K.3
Maher, D.M.4
-
7
-
-
0022580759
-
"Impurity-induced enhancement of the growth of amorphized silicon during solid-phase epitaxy: A free-carrier effect"
-
C. Licoppe and Y. I. Nissim, "Impurity-induced enhancement of the growth of amorphized silicon during solid-phase epitaxy: A free-carrier effect," J. Appl. Phys., vol. 59, no. 2, pp. 432-438, 1995.
-
(1995)
J. Appl. Phys.
, vol.59
, Issue.2
, pp. 432-438
-
-
Licoppe, C.1
Nissim, Y.I.2
-
8
-
-
0036679146
-
"Carbon in silicon: Modeling of diffusion and clustering mechanisms"
-
Aug
-
R. Pinacho, P. Castrillo, M. Jaraiz, I. Martin-Bragado, J. Barbolla, H.-J. Gossmann, G.-H. Gilmer, and J.-L. Benton, "Carbon in silicon: Modeling of diffusion and clustering mechanisms," J. Appl. Phys., vol. 92, no. 3, pp. 1582-1586, Aug. 2002.
-
(2002)
J. Appl. Phys.
, vol.92
, Issue.3
, pp. 1582-1586
-
-
Pinacho, R.1
Castrillo, P.2
Jaraiz, M.3
Martin-Bragado, I.4
Barbolla, J.5
Gossmann, H.-J.6
Gilmer, G.-H.7
Benton, J.-L.8
-
9
-
-
3743153340
-
"EPR observation of isolated interstitial carbon atom in silicon"
-
May
-
G. D Watkins and K. L. Brower, "EPR observation of isolated interstitial carbon atom in silicon," Phys. Rev. Lett., vol. 36, no. 22, pp. 1329-1332, May 1976.
-
(1976)
Phys. Rev. Lett.
, vol.36
, Issue.22
, pp. 1329-1332
-
-
Watkins, G.D.1
Brower, K.L.2
-
11
-
-
17644387747
-
y incorporation"
-
Apr
-
y incorporation," IEEE Electron Device Lett., vol. 26, no. 4, pp. 252-254, Apr. 2005.
-
(2005)
IEEE Electron Device Lett.
, vol.26
, Issue.4
, pp. 252-254
-
-
Tan, C.F.1
Chor, E.F.2
Lee, H.3
Liu, J.4
Quek, E.5
Chan, L.6
-
12
-
-
0142232209
-
"Removal of end-of-range defects in Ge preamorphized Si by carbon ion implantation"
-
Mar
-
P.-S. Chen, T. E. Hsieh, and C.-H. Chu, "Removal of end-of-range defects in Ge preamorphized Si by carbon ion implantation," J. Appl. Phys., vol. 85, no. 6, pp. 3114-3119, Mar. 1999.
-
(1999)
J. Appl. Phys.
, vol.85
, Issue.6
, pp. 3114-3119
-
-
Chen, P.-S.1
Hsieh, T.E.2
Chu, C.-H.3
-
13
-
-
0032049703
-
"Secondary defects in low-energy As-implanted Si"
-
Apr
-
M. Tamura, Y. Hiroyama, A. Nishida, and M. Horiuchi, "Secondary defects in low-energy As-implanted Si," Appl. Phys. A, Solids Surf., vol. 66, no. 4, pp. 373-384, Apr. 1998.
-
(1998)
Appl. Phys. A, Solids Surf.
, vol.66
, Issue.4
, pp. 373-384
-
-
Tamura, M.1
Hiroyama, Y.2
Nishida, A.3
Horiuchi, M.4
-
14
-
-
33744759661
-
"Integration of ultra shallow junctions in PVD TaN nMOS with flash annealing"
-
Sep
-
S. Severi, K. De Meyer, B. J. Pawlak, R. Duffy, C. Kerner, S. McCoy, J. Gelpey, T. Selinger, L. A. Ragnarsson, P. P. Absil, M. Jurczak, and S. Biesemans, "Integration of ultra shallow junctions in PVD TaN nMOS with flash annealing," in Proc. SSDM, Sep. 2005, pp. 910-911.
-
(2005)
Proc. SSDM
, pp. 910-911
-
-
Severi, S.1
De Meyer, K.2
Pawlak, B.J.3
Duffy, R.4
Kerner, C.5
McCoy, S.6
Gelpey, J.7
Selinger, T.8
Ragnarsson, L.A.9
Absil, P.P.10
Jurczak, M.11
Biesemans, S.12
|