Leakage suppression of gated diodes fabricated under low-temperature annealing with substitutional carbon Si1-yCy incorporation

IEEE Electron Device Letters

Volumn 26, Issue 4, 2005, Pages 252-254

  Tan, Chung Foong ^a,b   Chor, Eng Fong ^a   Lee, Hyeokjae ^b   Liu, Jinping ^b   Quek, Elgin ^b   Chan, Lap ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

Carbon; Junction leakage; Solid phase epitaxy re growth (SPER)

Indexed keywords

ANNEALING; CARBON; CHEMICAL VAPOR DEPOSITION; DIODES; EPITAXIAL GROWTH; GATES (TRANSISTOR); INTEGRATED CIRCUIT MANUFACTURE; LEAKAGE CURRENTS; SEMICONDUCTOR JUNCTIONS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

JUNCTION LEAKAGE; SOLID PHASE EPITAXY REGROWTH (SPER);

MOSFET DEVICES;

EID: 17644387747     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.845501     Document Type: Article

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