The surface topography of GaN grown on Si (1 1 1) substrate before and after wet chemical etching

Materials Science in Semiconductor Processing

Volumn 9, Issue 1-3, 2006, Pages 403-406

  Zhao, Liwei ^a   Liu, Caichi ^a   Teng, Xiaoyun ^a   Sun, Shilong ^a   Zhang, Wei ^a   Zhu, Junshan ^a   Feng, Yuchun ^b   Guo, Baoping ^b  

^a HEBEI UNIVERSITY OF TECHNOLOGY   (China)

^b SHENZHEN UNIVERSITY   (China)

Author keywords

Dislocation interaction; Etch pit; GaN

Indexed keywords

CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); ETCHING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS; SURFACE TOPOGRAPHY; TRANSMISSION ELECTRON MICROSCOPY;

DISLOCATION INTERACTION; ETCH PIT; PLAN-VIEW; SUB-GRAINS;

GALLIUM NITRIDE;

EID: 33744524292     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.01.024     Document Type: Article

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