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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 5 B, 2004, Pages 2942-2945

Investigation of the electron nonradiative transition in extremely thin GaInNAs/GaAs single quantum well by using a piezoelectric photothermal spectroscopy

(4) Imai, Kenji a Fukushima, Shin Ichi a Ikari, Tetsuo a Kondow, Masahiko b

a UNIVERSITY OF MIYAZAKI (Japan)

b HITACHI LTD (Japan)

Author keywords

Density of state; Exciton; GainNAs; Nonradiatlve recombination; Piezoelectric photothermal spectroscopy; Single quantum well

Indexed keywords

BINDING ENERGY; ELECTRON ENERGY LEVELS; ELECTRONS; EXCITONS; MOLECULAR BEAM EPITAXY; PIEZOELECTRICITY; QUANTUM THEORY; SEMICONDUCTING GALLIUM COMPOUNDS;

DENSITY OF STATE; NONRADIATIVE RECOMBINATION; PIEZOELECTRIC PHOTOTHERMAL SPECTROSCOPY; SINGLE QUANTUM WELL (SQW);

SEMICONDUCTOR QUANTUM WELLS;

EID: 3242767633 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.43.2942 Document Type: Article

Times cited : (17)

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