Piezoelectric photothermal study of AlxGa1-xAs epitaxial layer (x=0.22, 0.28, and 0.5) grown on semi-insulating GaAs substrate

Journal of Applied Physics

Volumn 90, Issue 9, 2001, Pages 4385-4391

  Fukuyama, Atsuhiko ^a   Fukuhara, Hironori ^a,b   Tanaka, Shin Ichi ^a,c   Memon, Aftab A ^a   Sakai, Kentaro ^a   Akashi, Yoshito ^a   Ikari, Tetsuo ^a  

^a UNIVERSITY OF MIYAZAKI   (Japan)

^b NEC CORPORATION   (Japan)

^c Kyushu Matsushita Electric Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035504761     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1407309     Document Type: Article

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