Piezoelectric photoacoustic spectra of Zn-doped InGaAlP light-emitting diodes

Materials Science in Semiconductor Processing

Volumn 4, Issue 1-3, 2001, Pages 265-267

  Fukuyama, A ^a   Nagatomo, H ^a   Akashi, Y ^a   Ikari, T ^a  

^a UNIVERSITY OF MIYAZAKI   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION IN SOLIDS; ELECTRON TRANSITIONS; ENERGY GAP; LIGHT EMITTING DIODES; METAL CLADDING; PHOTOACOUSTIC SPECTROSCOPY; PIEZOELECTRICITY; SEMICONDUCTOR DOPING; ZINC;

INDIUM GALLIUM ALUMINUM PHOSPHIDE; PIEZOELECTRIC PHOTOACOUSTIC SPECTROSCOPY;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0035247416     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(00)00126-8     Document Type: Article

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